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FQB11N40CTM
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 5750
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 10.5A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 135W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 135W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 530m Ω @ 5.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.5A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 89 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 10.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Pulsed Drain Current-Max (IDM) 42A
Alternative Model
IPP60R074C6XKSA1
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