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IRF510STRLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5.6A D2PAK
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Buying Options
Total Price: USD $0.47
Unit Price: USD $0.4693
≥1 USD $0.4693
≥10 USD $0.38475
≥100 USD $0.37335
≥500 USD $0.361
≥1000 USD $0.34865
Inventory: 8002
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 43W Tc
Element Configuration Single
Power Dissipation 3.7W
Turn On Delay Time 6.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.6A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 180pF
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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Rochester Electronics, LLC