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PSMN2R9-30MLC,115
RoHS 
RoHS compliant
RoHS compliantPackage SOT-1210, 8-LFPAK33
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PSMN2R9-30MLC - N-channel 30 V 2.95 m? logic level MOSFET in LFPAK33 using NextPower Technology
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Buying Options
Total Price: USD $2.21
Unit Price: USD $2.21255
≥1 USD $2.21255
≥10 USD $1.81545
≥100 USD $1.75845
≥500 USD $1.70145
≥1000 USD $1.6454
Inventory: 8282
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 91W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 91W
Case Connection DRAIN
Turn On Delay Time 17.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2419pF @ 15V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 36.1nC @ 10V
Rise Time 30.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19.3 ns
Turn-Off Delay Time 24.6 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Pulsed Drain Current-Max (IDM) 523A
Avalanche Energy Rating (Eas) 75 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
IPU060N03L G
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