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STB24N65M2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 16A D2PAK
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Buying Options
Total Price: USD $4.15
Unit Price: USD $4.1477
≥1 USD $4.1477
≥10 USD $3.40385
≥100 USD $3.29745
≥500 USD $3.19105
≥1000 USD $3.08465
Inventory: 6708
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series MDmesh? M2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STB24N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 16A
Drain-source On Resistance-Max 0.23Ohm
Pulsed Drain Current-Max (IDM) 64A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 650 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Alternative Model

AOTF8N60

Alpha & Omega Semiconductor Inc.

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