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STF18NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II
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Buying Options
Total Price: USD $1.79
Unit Price: USD $1.791333
≥1 USD $1.791333
≥10 USD $1.689938
≥100 USD $1.594276
≥500 USD $1.504041
≥1000 USD $1.418905
Inventory: 9589
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh? II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STF18
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 55 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 50V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 15.5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.29Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 187 mJ
Dimensions
Height 16.4mm
Length 10.6mm
Width 4.6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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