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FDMS86300
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 80V N-Channel PowerTrench MOSFET
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Buying Options
Total Price: USD $1.48
Unit Price: USD $1.47725
≥1 USD $1.47725
≥10 USD $1.2122
≥100 USD $1.1742
≥500 USD $1.1362
≥1000 USD $1.0982
Inventory: 1796
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2010
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
Case Connection DRAIN
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7082pF @ 40V
Current - Continuous Drain (Id) @ 25°C 19A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 3.4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.0039Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 252 mJ
Nominal Vgs 3.4 V
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Dimensions
Height 1.05mm
Length 5mm
Width 6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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