Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9.1A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 9.1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.46Ohm
Pulsed Drain Current-Max (IDM) 26A