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IRF6636TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric ST
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 18A DIRECTFET
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Buying Options
Total Price: USD $0.88
Unit Price: USD $0.884043
≥1 USD $0.884043
≥10 USD $0.83401
≥100 USD $0.786803
≥500 USD $0.742262
≥1000 USD $0.700244
Inventory: 4041
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ST
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 18A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta 81A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.2 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 2.45V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 28 mJ

Dimensions

Height 506μm
Length 4.826mm
Width 3.95mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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