Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IRF3710PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
HEXFET? Tube Through Hole N-Channel Mosfet Transistor 57A Tc 57A 200W 47ns
PDF
/
Buying Options
Total Price: USD $0.94
Unit Price: USD $0.9405
≥1 USD $0.9405
≥10 USD $0.7714
≥50 USD $0.74765
≥100 USD $0.72295
≥500 USD $0.6992
≥1000 USD $0.627
Inventory: 1108
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 23MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 57A
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 25V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 57A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 280 mJ
Recovery Time 220 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Dimensions
Height 19.8mm
Length 10.54mm
Width 4.69mm
Alternative Model
No data
Recommended For You
BCR198SE6327BTSA1
Infineon Technologies