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IRLD014PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 1.7A 4-DIP
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Buying Options
Total Price: USD $4.15
Unit Price: USD $4.1477
≥1 USD $4.1477
≥10 USD $3.40385
≥100 USD $3.29745
≥500 USD $3.19105
≥1000 USD $3.08465
Inventory: 6529
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 200mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 1.7A
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V
Rise Time 110ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Input Capacitance 400pF
Recovery Time 130 ns
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
Dimensions
Height 3.3782mm
Length 6.2738mm
Width 5.0038mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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