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IPA65R1K0CEXKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V TO220-3
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.780282
≥1 USD $0.780282
≥10 USD $0.736119
≥100 USD $0.694448
≥500 USD $0.65514
≥1000 USD $0.618058
Inventory: 3258
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 328pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.2A Tc
Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 7.2A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 50 mJ
FET Feature Super Junction
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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