Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 525V
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 110 mJ