Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11.8 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.85A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.7A Tc
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 80 mJ