Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.004Ohm
Avalanche Energy Rating (Eas) 165 mJ