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IRFBC40APBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 6.2A TO-220AB
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 3571
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 6.2A
Number of Elements 1
Number of Channels 1
Voltage 600V
Power Dissipation-Max 125W Tc
Element Configuration Single
Current 62A
Power Dissipation 125W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1036pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 6.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.036nF
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Nominal Vgs 4 V
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