Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.2A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 28.8A