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STF10NM60N

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description STMICROELECTRONICS STF10NM60N Power MOSFET, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 5924
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Dimensions

Height 16.4mm
Length 10.4mm
Width 4.6mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF10N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 50V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.55Ohm
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 200 mJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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