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IRFP3710PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.025 Ohm; Id 57A; TO-247AC; Pd 200W; Vgs +/-20V
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Buying Options
Total Price: USD $1.67
Unit Price: USD $1.66535
≥1 USD $1.66535
≥10 USD $1.3661
≥100 USD $1.32335
≥500 USD $1.2806
≥1000 USD $1.23785
Inventory: 6901
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Height 24.99mm
Length 15.875mm
Width 5.3mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 1998
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 57A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 59 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 57A
Threshold Voltage 2V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 320 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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