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IRF9610PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 200V 1.8A TO-220AB
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.51015
≥1 USD $0.51015
≥10 USD $0.41895
≥100 USD $0.40565
≥500 USD $0.39235
≥1000 USD $0.38
Inventory: 3788
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -1.8A
Number of Elements 1
Number of Channels 1
Voltage 200V
Power Dissipation-Max 20W Tc
Element Configuration Single
Power Dissipation 20W
Turn On Delay Time 8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) -1.8A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Input Capacitance 170pF
Recovery Time 360 ns
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
Nominal Vgs -4 V
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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