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LP0701N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
PDF
Buying Options
Total Price: USD $1.57
Unit Price: USD $1.5694
≥1 USD $1.5694
≥10 USD $1.2882
≥100 USD $1.24735
≥500 USD $1.20745
≥1000 USD $1.16755
Inventory: 7298
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 300mA, 5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 15V
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Rise Time 20 ns
Drain to Source Voltage (Vdss) 16.5V
Drive Voltage (Max Rds On,Min Rds On) 2V 5V
Vgs (Max) ±10V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage -16.5V
Feedback Cap-Max (Crss) 60 pF
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
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