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MJE182
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 80V 3A 3-Pin(3+Tab) SOT-32 Tube
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Buying Options
Total Price: USD $0.29
Unit Price: USD $0.29355
≥1 USD $0.29355
≥10 USD $0.2413
≥100 USD $0.2337
≥500 USD $0.2261
≥1000 USD $0.2185
Inventory: 9055
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 11.05mm
Length 7.8mm
Width 2.9mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 12.5W
Current Rating 3A
Frequency 50MHz
Base Part Number MJE182
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 12.5W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1.7V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 50
Collector-Base Capacitance-Max 40pF
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