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BC847BFAQ-7B

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-XFDFN
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description GENERAL PURPOSE TRANSISTOR X2-DF
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.348499
≥1 USD $0.348499
≥10 USD $0.328777
≥100 USD $0.310163
≥500 USD $0.292608
≥1000 USD $0.276036
Inventory: 3446
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Surface Mount
Package / Case 3-XFDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series Automotive, AEC-Q101
JESD-609 Code e4
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 435mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 170MHz
Frequency - Transition 100MHz

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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