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BC857BLP4-7B
RoHS 
RoHS compliant
RoHS compliantPackage 3-XFDFN
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
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Buying Options
Total Price: USD $0.05
Unit Price: USD $0.04655
≥1 USD $0.04655
≥500 USD $0.03895
≥1000 USD $0.03705
≥2000 USD $0.0361
≥5000 USD $0.03515
≥10000 USD $0.03135
Inventory: 4741
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Max Power Dissipation 250mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC857BLP
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 250mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -100mA
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