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MJD32T4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
ON SEMICONDUCTOR - MJD32T4G - BIPOLAR TRANSISTOR, PNP, -40V D-PAK, FULL REEL
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Buying Options
Total Price: USD $0.39
Unit Price: USD $0.3876
≥1 USD $0.3876
≥10 USD $0.31825
≥100 USD $0.3078
≥500 USD $0.2983
≥1000 USD $0.28785
Inventory: 8479
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD32
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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