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2N5551TFR
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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Buying Options
Total Price: USD $0.12
Unit Price: USD $0.115521
≥1 USD $0.115521
≥10 USD $0.108981
≥100 USD $0.10281
≥500 USD $0.096992
≥1000 USD $0.091505
Inventory: 9509
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 600mA
Frequency 300MHz
Base Part Number 2N5551
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 160V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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