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2SD14500RA
RoHS
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Package 3-SSIP
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN 2SD1450 Bipolar (BJT) Transistor 200 @ 500mA 2V 500mA 300mW 200MHz
PDF
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Buying Options
Total Price: USD $3.08
Unit Price: USD $3.081012
≥1 USD $3.081012
≥10 USD $2.906617
≥100 USD $2.742091
≥500 USD $2.586878
≥1000 USD $2.440451
Inventory: 4641
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SSIP
Supplier Device Package NS-B1
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Max Power Dissipation 300mW
Current Rating 500mA
Base Part Number 2SD1450
Power - Max 300mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 500mA
Collector Emitter Breakdown Voltage 20V
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 500mA
Max Breakdown Voltage 20V
Frequency - Transition 200MHz
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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