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BD13910STU
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 80V 1.5A TO-126
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Buying Options
Total Price: USD $0.62
Unit Price: USD $0.6175
≥1 USD $0.6175
≥500 USD $0.5073
≥1000 USD $0.49115
≥2000 USD $0.475
≥5000 USD $0.4598
≥10000 USD $0.4123
Inventory: 938
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Dimensions
Height 11.2mm
Length 8.3mm
Width 3.45mm
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1.25W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD139
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Alternative Model
BYV410X-600PQ
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