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DMN65D8LW-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 0.3A SOT323
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Buying Options
Total Price: USD $52.58
Unit Price: USD $52.5806
≥1 USD $52.5806
≥500 USD $43.1433
≥1000 USD $41.79525
≥2000 USD $40.44625
≥5000 USD $39.0982
≥10000 USD $35.05405
Inventory: 7070
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V
Rise Time 2.8 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.3 ns
Turn-Off Delay Time 12.6 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 60V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1mm
Length 2.2mm
Width 1.35mm

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