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TP0610K-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
VISHAY - TP0610K-T1-GE3 - MOSFET-Transistor, p-Kanal, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.0665
≥5 USD $0.0665
≥50 USD $0.05415
≥150 USD $0.0532
≥500 USD $0.0513
≥3000 USD $0.0494
≥6000 USD $0.04465
Inventory: 6960
Minimum: 5
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Power Dissipation 350mW
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C 185mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -185mA
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Input Capacitance 155pF
Drain to Source Resistance 10Ohm
Rds On Max 190 mΩ
Nominal Vgs -1 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
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