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DMG6968U-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 6.5A SOT-23
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.1387
≥5 USD $0.1387
≥50 USD $0.114
≥150 USD $0.1102
Inventory: 140
Minimum: 5
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 36mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 810mW
Turn On Delay Time 54 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 151pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 66 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 205 ns
Turn-Off Delay Time 613 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 500mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 500 mV

Dimensions

Height 1mm
Length 2.9mm
Width 1.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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