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BSP149H6327XTSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 200 V 3.5 Ohm 11 nC SIPMOS? Power Mosfet - SOT-223
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Buying Options
Total Price: USD $1.18
Unit Price: USD $1.1818
≥1 USD $1.1818
≥10 USD $0.96995
≥100 USD $0.93955
≥500 USD $0.90915
≥1000 USD $0.87875
Inventory: 2183
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Dimensions
Height 1.6mm
Length 6.5mm
Width 3.5mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2002
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 5.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id 1V @ 400μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Current - Continuous Drain (Id) @ 25°C 660mA Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Rise Time 3.4 ns
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 480mA
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain Current-Max (Abs) (ID) 0.66A
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 2.6A
Dual Supply Voltage 200V
FET Feature Depletion Mode
Nominal Vgs -1.4 V
Alternative Model
RN1111,LF(CT
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