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LND150N8-G

Microchip Technology
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 500V 0.03A 4-Pin(3+Tab) SOT-89
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Buying Options
Total Price: USD $10.74
Unit Price: USD $10.73975
≥1 USD $10.73975
≥10 USD $8.8122
≥100 USD $8.5367
≥500 USD $8.2612
≥1000 USD $7.9857
Inventory: 4683
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 5 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON

Dimensions

Height 1.6mm
Length 4.6mm
Width 2.6mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Power Dissipation 1.2W
Case Connection SOURCE
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30mA Tj
Rise Time 450 ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 450 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.03A
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode

Alternative Model

SPD100N03S2L-04

Rochester Electronics, LLC

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