Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
STN1HNK60
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 400MA SOT223
PDF
/
Buying Options
Total Price: USD $0.43
Unit Price: USD $0.43035
≥1 USD $0.43035
≥10 USD $0.35245
≥100 USD $0.342
≥500 USD $0.3306
≥1000 USD $0.32015
Inventory: 2057
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 8.5Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 400mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STN1H
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.4A
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 25 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs 3 V
Dimensions
Height 1.82mm
Length 6.5mm
Width 3.5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
SPD06N60C3BTMA1
Infineon TechnologiesRecommended For You
FCPF9N60NT
ON Semiconductor