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BSP295H6327XTSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R
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Buying Options
Total Price: USD $0.56
Unit Price: USD $0.5643
≥1 USD $0.5643
≥10 USD $0.46265
≥100 USD $0.4484
≥500 USD $0.43415
≥1000 USD $0.4199
Inventory: 3464
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2001
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 5.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 368pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 9.9 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 1.8A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 7.2A
Dual Supply Voltage 60V
Nominal Vgs 1.1 V
Dimensions
Height 1.6mm
Length 6.5mm
Width 3.5mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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