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SIR876ADP-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 100 V 14.5 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8
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Buying Options
Total Price: USD $0.72
Unit Price: USD $0.72485
≥1 USD $0.72485
≥10 USD $0.59565
≥100 USD $0.57665
≥500 USD $0.55765
≥1000 USD $0.5396
Inventory: 3075
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Manufacturer Package Identifier S17-0173-Single
Dimensions
Height 1.17mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 62.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 50V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 15.2A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
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