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IPD60R380P6ATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
INFINEON IPD60R380P6Power MOSFET, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
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Buying Options
Total Price: USD $7.86
Unit Price: USD $7.85997
≥1 USD $7.85997
≥10 USD $7.415063
≥100 USD $6.995347
≥500 USD $6.599387
≥1000 USD $6.225831
Inventory: 3623
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Weight 3.949996g
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? P6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 83W Tc
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 10.6A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Input Capacitance 877pF
Drain to Source Resistance 342mOhm
Rds On Max 380 mΩ
Alternative Model
SSM6N55NU,LF(T
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