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SI7106DN-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? 1212-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 12.5A 1212-8
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.3325
≥1 USD $0.3325
≥10 USD $0.27265
≥100 USD $0.2641
≥500 USD $0.25555
≥1000 USD $0.247
Inventory: 8624
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.04mm
Length 3.3mm
Width 3.3mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 6.2mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 19.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12.5A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 19.5A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 45 mJ
Alternative Model
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