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DMG1012T-7
RoHS 
RoHS compliant
RoHS compliantPackage SOT-523
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 630MA SOT-523
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Buying Options
Total Price: USD $0.56
Unit Price: USD $0.05605
≥10 USD $0.05605
≥100 USD $0.0456
≥300 USD $0.04465
≥3000 USD $0.04275
≥6000 USD $0.0418
≥9000 USD $0.03705
Inventory: 15130
Minimum: 10
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+
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Supplier Device Package SOT-523
Weight 2.012816mg
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 400MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 280mW Ta
Element Configuration Single
Power Dissipation 280mW
Turn On Delay Time 5.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C 630mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V
Rise Time 7.4ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 12.3 ns
Turn-Off Delay Time 26.7 ns
Continuous Drain Current (ID) 630mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
Input Capacitance 60.67pF
Drain to Source Resistance 300mOhm
Rds On Max 400 mΩ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 800μm
Length 1.7mm
Width 850μm
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