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STW9N150
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1500V HI-VOLT PWRMESH PWR MOSFET
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Buying Options
Total Price: USD $96.03
Unit Price: USD $96.03265
≥1 USD $96.03265
≥10 USD $92.93565
≥100 USD $89.8377
≥500 USD $80.54385
Inventory: 6893
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.5Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW9N
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 320W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 320W
Turn On Delay Time 41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3255pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 89.3nC @ 10V
Rise Time 14.7 ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 86 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 1.5kV
Avalanche Energy Rating (Eas) 720 mJ
Max Junction Temperature (Tj) 150°C
Dimensions
Height 24.45mm
Length 15.75mm
Width 5.15mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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