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STY145N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 138A MAX247
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Buying Options
Total Price: USD $29.53
Unit Price: USD $29.53265
≥1 USD $29.53265
≥10 USD $24.2326
≥100 USD $23.47545
≥500 USD $22.71735
≥1000 USD $21.9602
Inventory: 8001
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Dimensions
Height 20.3mm
Length 15.9mm
Width 5.3mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STY145
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 625W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Turn On Delay Time 255 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 69A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 18500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 138A Tc
Gate Charge (Qg) (Max) @ Vgs 414nC @ 10V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 82 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 138A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 710V
Pulsed Drain Current-Max (IDM) 552A
Avalanche Energy Rating (Eas) 2420 mJ
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