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STD18N55M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes
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Buying Options
Total Price: USD $13.42
Unit Price: USD $13.42445
≥1 USD $13.42445
≥10 USD $11.01525
≥100 USD $10.6704
≥500 USD $10.3265
≥1000 USD $9.9826
Inventory: 8771
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh? V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 180mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number STD18
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 192m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 9.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 56A
Dimensions
Height 2.4mm
Length 6.6mm
Width 6.2mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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