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IRF6645TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric SJ
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5.7A DIRECTFET
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Buying Options
Total Price: USD $0.9
Unit Price: USD $0.896837
≥1 USD $0.896837
≥10 USD $0.846067
≥100 USD $0.798186
≥500 USD $0.752998
≥1000 USD $0.710385
Inventory: 9462
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SJ
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 5.7A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.7A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 5.7mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 29 mJ
Dimensions
Height 410μm
Length 3.95mm
Width 3.95mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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