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PSMN102-200Y,115 image
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PSMN102-200Y,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 21.5A LFPAK
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Buying Options
Total Price: USD $1.83
Unit Price: USD $1.8259
≥1 USD $1.8259
≥500 USD $1.49815
≥1000 USD $1.4516
≥2000 USD $1.40505
≥5000 USD $1.35755
≥10000 USD $1.2179
Inventory: 8209
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 113W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 113W
Case Connection DRAIN
Turn On Delay Time 14.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 102m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1568pF @ 30V
Current - Continuous Drain (Id) @ 25°C 21.5A Tc
Gate Charge (Qg) (Max) @ Vgs 30.7nC @ 10V
Rise Time 29.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 21.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.102Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 65A
Avalanche Energy Rating (Eas) 202 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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NXP USA Inc.

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