Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Power Dissipation-Max 42.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 48A