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IRLD024PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4
PDF
Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 7019
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 100mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 2.5A
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 110ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Input Capacitance 870pF
Recovery Time 260 ns
Drain to Source Resistance 100mOhm
Rds On Max 100 mΩ
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 3.37mm
Length 5mm
Width 6.29mm
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