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SI9435BDY-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 4.1A 8-SOIC
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Buying Options
Total Price: USD $0.24
Unit Price: USD $0.23655
≥1 USD $0.23655
≥10 USD $0.1938
≥100 USD $0.1881
≥500 USD $0.1824
≥1000 USD $0.17575
Inventory: 9658
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 42mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 42m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.1A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 14 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) -5.7A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Nominal Vgs -1 V
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Alternative Model
IPN80R4K5P7ATMA1
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