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SI4435DDY-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 11.4A 8-SOIC
PDF
Buying Options
Total Price: USD $0.84
Unit Price: USD $0.1672
≥5 USD $0.1672
≥50 USD $0.1368
≥150 USD $0.133
≥500 USD $0.12825
Inventory: 2230
Minimum: 5
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 24MOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 9.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 35 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -8.1A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Dimensions
Height 1.75mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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