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IRLL110TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1.5A SOT223
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.3496
≥1 USD $0.3496
≥10 USD $0.2869
≥100 USD $0.2774
≥500 USD $0.26885
≥1000 USD $0.2603
Inventory: 9764
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 250.212891mg
Transistor Element Material SILICON
Dimensions
Height 1.8mm
Length 6.7mm
Width 3.7mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 540mOhm
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2W Ta 3.1W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 9.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 540m Ω @ 900mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Rise Time 47 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 50 mJ
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
APTM50A15FT1G
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