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FDMA430NZ
RoHS 
RoHS compliant
RoHS compliantPackage 6-VDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N CH MOSFET, 30V, 5A, MICROFET 2X2
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Buying Options
Total Price: USD $0.49
Unit Price: USD $0.48605
≥1 USD $0.48605
≥10 USD $0.45854
≥100 USD $0.43259
≥500 USD $0.4081
≥1000 USD $0.385
≥3000 USD $0.36321
Inventory: 1897
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 40MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
Case Connection DRAIN
Turn On Delay Time 8.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 7.1 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 18.1 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 810mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
Dual Supply Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 810 mV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 825μm
Length 2mm
Width 2mm
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