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PSMN4R0-30YLDX
RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET MOSFET N-CH 30V LFPAK
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Buying Options
Total Price: USD $4.35
Unit Price: USD $4.3548
≥1 USD $4.3548
≥10 USD $3.5739
≥100 USD $3.4618
≥500 USD $3.35065
≥1000 USD $3.23855
Inventory: 2626
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 64W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1272pF @ 15V
Current - Continuous Drain (Id) @ 25°C 95A Tc
Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V
Rise Time 21.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.7 ns
Turn-Off Delay Time 14.9 ns
Continuous Drain Current (ID) 95A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 378A
Avalanche Energy Rating (Eas) 63 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Physical
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
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